半导体光电, 2011, 32 (3): 304, 网络出版: 2012-01-04
Si基Ge外延薄膜材料发光性能研究进展
Research Progress on Luminous Properties of Sibased Ge Epitaxial Films
摘要
理论和实验研究表明,在一定的应变和掺杂浓度下,Si基外延Ge薄膜能实现1.55μm光通信波段的直接带隙发光。讨论了Si基外延Ge材料的生长技术及其能带结构,结合本小组近年来在该领域所取得的成果,介绍了国内外各研究机构对Ge薄膜发光材料和器件的研究进展,展望了未来的发展趋势。
Abstract
It has been theoretically and experimentally demonstrated that, with proper band structure engineering using inplain tensile stress and ntype doping, germanium can be used as efficient light emission materials and optical gain can be achieved at near 1550nm. In this paper, epitaxial growth of Ge on Si substrate and modulation of its band structure are summarized. The research progress on light emission of Sibased Ge epilayer is reviewed and the developing trends are discussed.
黄诗浩, 李成, 陈城钊, 郑元宇, 赖虹凯, 陈松岩. Si基Ge外延薄膜材料发光性能研究进展[J]. 半导体光电, 2011, 32(3): 304. 黄诗浩, 李成, 陈城钊, 郑元宇, 赖虹凯, 陈松岩. Research Progress on Luminous Properties of Sibased Ge Epitaxial Films[J]. Semiconductor Optoelectronics, 2011, 32(3): 304.