通过瞬态反射各向异性谱和瞬态反射谱在线监测和研究了AlxGa1-xAs的生长过程，利用金属有机化合物汽相淀积技术在GaAs (001)衬底上生长了多层AlxGa1-xAs结构。选择最适合在线监测生长过程的探测光能量，在此探测光能量处所得到的反射各向异性谱和反射谱的信号在生长过程中有很明显的振荡行为产生。研究发现，通过瞬态反射各向异性谱可以很好地分辨出由表面引起的光学各向异性和由界面处引起的光学各向异性，能够得到界面处形成缺陷的信息，并且发现了反射各向异性谱和反射谱的信号随着铝组分的不同而发生有规律的变化。

The MOCVD growth of AlxGa1-xAs for application in high-power laser diodes was studied by using time resolved reflectance anisotropy spectroscopy (RAS) and normalized reflectance (NR) were studied. Multi-layer AlxGa1-xAs structures with different Al compisition were grown on GaAs (001) substrates. The most suitable photon energy for monitoring the growth process was investigated. The NR and RAS signals at photon energy near the fundamental band gap showed an oscillatory behavior during the growth. The different contribution of surface-induced optical anisotropy and interface-induced optical anisotropy could be distinguished in situ by RAS transient spectra. The intensities of the RAS and NR signals were strongly dependent on the aluminium composition.