分析了熔体提拉法生长Ho∶Tm∶YLF晶体过程中熔体表面漂浮物的产生原因，以及晶体中散射颗粒、孪晶和开裂的成因。通过精心设计对称性温场，并调整温场、优化生长工艺参数，有效消除了晶体中的散射颗粒，克服了晶体开裂。采取在生长气氛中加入一定量CF4等工艺措施有效减少了熔体表面上的氟氧化物漂浮物，克服了漂浮物对生长晶体的影响，生长出了尺寸为(25~30)mm×(100~120)mm的高品质HoTmYLF晶体。HoTmYLF晶体激光性能测试表明，在LD双端抽运条件下获得了超过10 W的2.05 μm激光输出，激光斜率效率达到41.2%，光光转换效率达到36.4%。

The causes of the floating-debris on the surface of HoTmYLF melt, the scattering particles and the crack of HoTmYLF crystal during the Czochralski growth are analyzed in this paper. Through elaborately designing of the symmetry temperature field, and adjusting temperature gradient and the crystal growth process parameters, the scattering particles and the crack of the crystal are eliminated effectively. The growth atmosphere with a certain volume CF4 contributes to decreasing the floating-debris on the melt surface effectively, and the influence of the floating-debris on the normal crystal growth are overcome. By above technique ways, high-quality HoTmYLF crystals with the size of (25~30)mm×(100~120)mm are grown. The laser performance test of HoTmYLF crystal shows that under LD double-end-pumped conditions more than 10 W laser at 2.05 μm is achieved, and the laser slope efficiency reaches 41.2%, optical-to-optical efficiency reaches 36.4%.