利用光学傅里叶变换研究多晶硅绒面微结构形貌与反射率之间的关系。理论分析表明：多晶硅绒面反射率与表面微结构形貌、单位面积上陷阱坑数量有关。如绒面由V字型槽或坑构成，则绒面反射率比较高；如多晶硅表面上密集布满U字形坑或槽、内表面绒面化，这种结构构成的绒面反射率低。实验上用不同比例的酸液刻蚀多晶体表面，用扫描电镜(SEM)观察多晶硅表面SEM图，测量了其表面反射率，分析表面结构形貌与反射率的关系。实验结果与理论分析相吻合。

The shape of trap-pit strongly affects the reflective characters of multi-crystalline silicon (mc-Si) surface. Using Fourier transform, a model how the trap-pit shape affects the textured surface reflectance is investigated, and a simple expression for calculation of the etched surface reflectance is given. The theoretical analysis shows the strong dependence of reflectance on the textured shape and the trap-pit density. It is found that the reflectance is low for the etched surface covered with U-deep trap pit, but it is high for the etched surface full of V-shallow trap-pit. In experiments, mc-Si was textured in the acid solution with different concentration, sample′s surface was scanned by SEM and the reflection spectrum was measured in the 350~1100 nm wavelength range. The experimental results fit the theoretical analysis well.