低光束质量严重限制了大功率半导体激光器的应用，为了满足日益增长的工业和**领域应用需求，发展兼具高功率和高光束质量激光输出的半导体激光光源具有重要意义。采用线阵合束方式集成20个传导热沉封装半导体激光单元，结合斜45°柱透镜阵列整形方法和准直技术，直接均衡激光束快慢轴方向的光斑和发散角，通过波长合束和偏振合束，研制出一种可实用化、连续输出功率1030 W、快慢轴方向光参量积分别为18.3 mm·mrad和17.7 mm·mrad、最大电光转换效率44%的808 nm和870 nm双波长半导体激光合束光源，实现了高效率、高功率和高光束质量激光输出，可作为直接光源应用于工业和**领域。

The application of high power diode lasers is severely limited by their poor beam quality. In order to meet the increasing demands for industrial and defense applications, it is important to develop diode laser sources with both high power and high beam quality. The technology of linear array coupling is applied to multiplex twenty passively cooled diode lasers. 45°tilted cylindrical lens arrays and collimators are recommended to make the beam sizes and divergences of fast and slow axes equal, respectively. Wavelength coupling and polarization coupling finally are followed. A dual-wavelength 808 nm and 870 nm diode laser coupling source is successfully developed, with continuous output power of 1030 W, beam parameter products of fast and slow axes of 18.3 mm·mrad and 17.7 mm·mrad, respectively, and maximum electro-optical conversion efficiency up to 44%. High efficiency, high power and high beam quality laser output is achieved. It can be used as direct source in industrial and defense areas.