通过二元系和三元系结构参数计算四元系量子阱结构的晶格常数、禁带宽度等，设计了InGaAsSb/AlGaAsSb结构的MBE生长参数及工艺，利用X射线双晶衍射和PL谱研究了InGaAsSb/AlGaAsSb多量子阱结构特性和光学特性。X射线双晶衍射谱中出现了8条卫星峰，表明制备的InGaAsSb/AlGaAsSb多量子阱结构具有良好的结晶质量。利用光致发光光谱方法对制备的样品的光学性质进行了表征，结果表明，不同组份的InGaAsSb/AlGaAsSb多量子阱的发光峰波长随组份的变化在1.6～2.28 μm范围内可调，样品PL谱的半峰宽最窄可达22 meV。

Due to the basic characteristics of InGaAsSb/AlGaAsSb, based on the calculate lattice constant and energy band of quaternary system through the calculation of structure constants of binary system and ternary system, and analyze the MBE growth parameters and process, we design and grow the InGaAsSb/AlGaAsSb multi-quantum-wells epitaxial materials. The characterization of the layers has been carried out by X-ray double crystal diffraction and photo luminescence. There are several satellite peaks in X-ray double crystal diffraction results which indicate that these prepared InGaAsSb/AlGaAsSb multi-quantum-Wells are with high crystallized quality. The results of PL spectra at the room temperature indicate that the wave length are modulated from 1.6 to 2.28 μm, the narrowest PL FWHM is 22 meV.