为了解决垂直腔面发射激光器(VCSEL)列阵中金丝难以键和和电流注入不均匀的问题, 提出了一种非闭合型VCSEL列阵结构。该结构通过腐蚀非闭合环形凹槽形成器件台面, 从而简化了工艺步骤, 减少了器件的损伤。分别对2×2,3×3,4×4阵列的850 nm 非闭合型顶发射VCSEL器件进行了测试和分析, 结果显示其室温连续输出功率分别达到80, 140和480 mW; 阈值电流分别为0.15, 0.25和0.4 A; 平行方向和垂直方向上的远场发散角分别为9°和9.6°, 13.5°和14.4°, 15°和14.4°。在脉宽为50 μs、重复频率为100 Hz 时, 最大输出功率分别为90, 318和1 279 mW; 阈值电流分别为0.2, 0.5和0.7 A。分别测试了芯片在封装前后的功率曲线, 发现芯片在封装之后的热饱和电流要远远高于封装之前, 从而说明良好的封装技术可以提高器件的散热效率, 降低器件内部发热对器件性能的影响。

To improve the wire bonding and homogeneous injecting currents, this paper proposes a Vertical Cavity Surface-emitting Laser (VCSEL) array with a non-closed structure. In this structure, a non-closed groove is etched to form a mesa for simplifying the processing and reducing the damage of devices. The 850 nm VCSEL arrays (including 2×2,3×3 and 4×4 array devices) with the non-closed type top emission structures are tested and analyzed. Results show that the continuous output powers are up to 80, 140 and 480 mW at room temperature, threshold currents are 0.15, 0.25 and 0.4 A, and the far-field divergence angles in parallel and vertical directions are 9° and 9.6°,13.5°and 14.4°,15° and 14.4°, respectively. In the context of a pulse width of 50 μs and a pulse repetition rate of 100 Hz, the maximum output powers are 90, 318 and 1 279 mW and the threshold currents are 0.2, 0.5 and 0.7 A, respectively. The power curves of chips are tested before and after packaged. The result shows that the heat saturation current of the chip after packaged is much higher than that of the chip before packaged, which suggests that good packaging can improve the cooling efficiency and reduce the effect of internal heating on the device performance.