为了适应未来红外焦平面探测器系统小型化、集成化和高精度的发展要求，采用了热蒸发方法分别在InP衬底和InGaAs探测器上实现了中心波长为1.38 μm滤光膜的片上集成。利用偏光显微镜、原子力显微镜(AFM)和扫描电子显微镜(SEM)以及红外傅里叶光谱(FTIR)等实验手段研究了滤光膜的表面界面形貌和光学性能，结果显示，滤光膜为法布里珀罗三谐振腔结构，与膜系设计一致；滤光膜中心波长为1.38 μm，透射率在60%左右。对集成滤光膜InGaAs器件的电学和光学性能测试分析表明，滤光膜制备工艺对器件的电流电压特性和噪声基本没有影响；而集成滤光膜器件的响应要优于滤光膜分离器件的性能。

For compact, low-cost and high-precision consideration, the filter films centered on 1.38 μm are fabricated on InP substrates and InGaAs detector by thermal evaporation. The optical properties, surface and interface morphology of the films are investigated by polarized light microscope, atomic force microscope (AFM) ,scanning electron microscope (SEM) and Fourier transform infrared spectroscopy (FTIR). It shows that the filter film contains a three-cavity Fabry-Perot structure, the same with the design, the centralwavelength of the passband is 1.38 μm and the peak of transmission is around 60%. Tested electrical performance results reveal that the fabrication process has no effect on current-voltage characteristics and noise of the device. The optical response testing shows that the integrated device has a better performance than the device separated with the filter film.