研究了生长态和退火后Cd1-xMnxTe晶片的吸收边和红外透过性能.Cd1-xMnxTe晶体采用垂直Bridgman法生长，获得面积为30 mm×40 mm的(111)面Cd1-xMnxTe单晶片；晶片在Cd气氛下退火.近红外光谱表明, 吸收边的截止波长反映晶片的Mn含量范围为0.1887≤x≤0.2039，其中轴向成分波动差值约为0.0152，径向成分波动差值约为0.0013；x=0.2的Cd1-xMnxTe晶体吸收边的吸收系数变化范围为2.5~55 cm-1；退火后，晶体的吸收边位置没有变化，表明晶片中Mn含量未受到退火的影响.傅里叶变换红外透射光谱表明, 晶片在红外光波数为4000~500 cm-1范围的红外透过率为45%～55%；退火后，晶片的红外透过率提高到61%以上，接近理论值65%.

The absorption edge and IR transmission of the as-grown and annealed Cd1-xMnxTe wafer were investigated. The Cd1-xMnxTe crystal was grown by the vertical Bridgman method, from which several (111) face monocrystalline wafers with area of 30 mm×40 mm were sliced. The wafer was annealed under Cd atmosphere. The cut-off wavelength of the absorption edge obtained from the NIR transmission spectra indicates that the Mn composition within the as-grown wafer is in the range of 0.1887≤x≤0.2039, and the Mn variation is about 0.0152 and 0.0013 in the axial and radial directions of the wafer, respectively. The absorption coefficient of Cd1-xMnxTe (x=0.2) deduced from the absorption edge of the NIR transmission spectrum ranges from 2.5 to 55 cm-1. The FT-IR spectra in the wavenumber range 4000~500 cm-1 show that the IR transmittance of the as-grown wafer is in the range of 45%~55%. Annealing does not change the positions of absorption edge, which shows that the annealing treatment has no effect on the Mn composition of the wafer. IR transmittance of the annealed wafer increases to above 61% in the wavenumber range of 4000~500 cm-1, which is close to the theoretical value of 65%.