中国激光, 2012, 39 (5): 0502005, 网络出版: 2012-04-16   

氧化孔径对高功率垂直腔面发射激光器温升的影响

Effect of Oxide Aperture on Temperature Rise in High Power Vertical-Cavity Surface-Emitting Laser
作者单位
1 中国科学院长春光学精密机械与物理研究所, 发光学及应用国家重点实验室, 吉林 长春130033
2 中国科学院研究生院, 北京 100049
摘要
为了在制作垂直腔面发射激光器(VCSEL)时选择合适的氧化孔径尺寸,以获得较好的光束质量和较高的输出功率,对具有不同氧化孔径的单管器件的热特性进行了实验研究。通过控制氧化时间,制作了氧化孔径分别为415、386、316 μm的单管器件,台面直径和P型接触电极直径均为450 μm和400 μm。针对3种器件在室温连续工作条件下不同的输出特性,对它们的热阻进行了实验测量,发现氧化孔径越小时器件热阻越大。通过对比电流、波长及温度的关系,得到了由电流引起的自热效应给3种器件带来的温升情况。注入电流为1 A时,氧化孔径为415 μm的器件温度为32.4 ℃,氧化孔径为386 μm的器件温度为35.2 ℃,氧化孔径为316 μm时,器件的温度高达76.4 ℃。
Abstract
Thermal characteristics of single vertical-cavity surface-emitting laser (VCSEL) devices with different oxide apertures are studied experimentally in order to get better beam quality and higher output power by choosing appropriate size of the oxide aperture. Single devices with oxide apertures of 415, 386, and 316 μm are made by controlling the oxidation time. Diameters of the mesa and the P type contact are 450 μm and 400 μm, respectively. Thermal resistances of three kinds of devices are measured experimentally based on their different output characteristics under continuous-wave (CW) operation at room temperature. It is found that the smaller the oxide aperture is, the larger the thermal resistance of the device becomes. Temperature rise caused by self heating of injection current is obtained by comparing the relationship of current, wavelength and temperature. At a current of 1 A, the temperature of devices are 32.4 ℃, 35.2 ℃ and 76.4 ℃ corresponding to the oxide aperture of 415, 386, and 316 μm, respectively.

刘迪, 宁永强, 秦莉, 张金龙, 张星, 刘云, 王立军. 氧化孔径对高功率垂直腔面发射激光器温升的影响[J]. 中国激光, 2012, 39(5): 0502005. Liu Di, Ning Yongqiang, Qin Li, Zhang Jinlong, Zhang Xing, Liu Yun, Wang Lijun. Effect of Oxide Aperture on Temperature Rise in High Power Vertical-Cavity Surface-Emitting Laser[J]. Chinese Journal of Lasers, 2012, 39(5): 0502005.

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