Chinese Optics Letters, 2012, 10 (s1): S11401, Published Online: Apr. 17, 2012   

Substrate-removed semiconductor disk laser with 0.6 W output power Download: 565次

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Abstract
A high power and good beam quality InGaAs/GaAs quantum well semiconductor disk laser at 1 015 nm wavelength is reported. The semiconductor wafer is grown in reverse order: substrate is on the window side and the distributed Bragg reflector is the last grown epilayer. Then the wafer is up-side-down and capillary bonded to a SiC heatsink, and the substrate is chemically etched. Because the total thickness of the substrate-removed structure is less than 10 μm, the thermal management of the laser is significantly improved, and the maximum output power over 0.6 W is obtained using a 3% output coupler and 3.2 W incident pump power. The M2 factors of 1.02 and 1.01 indicate a near-diffraction-limited beam quality. To further reveal the characteristics of this substrate-etched structure on the thermal management, the heat flux and the temperature distribution of the gain wafer are numerically analyzed, and the corresponding results are discussed.

Peng Zhang, Teli Dai, Yu Wu, Yanhai Ni, Yong Zhou, Li Qin, Yiping Liang, Siqiang Fan. Substrate-removed semiconductor disk laser with 0.6 W output power[J]. Chinese Optics Letters, 2012, 10(s1): S11401.

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