针对光刻线宽均匀性控制问题，研究了硅片翘曲度对光刻线宽均匀性的影响。采用翘曲度测试仪研究热工艺过程中硅片翘曲度的变化。研究结果表明，硅片翘曲度对线宽均匀性产生重要的影响，翘曲度大，则线宽均匀性降低。通过优化栅氧化工艺的升降温速率、进出炉速率，使硅片翘曲度降低，线宽非均匀性由±4%降低到±2%。

The effects of silicon warp on lithography critical dimension uniformity were studied by analyzing the variety of silicon warp in the heat processing by surface metrology. The result indicates the silicon warp has great effects on the uniformity of lithography critical dimension, that is, bigger warp brings lower uniformity.The silicon warp is reduced by optimizing gate oxide processing, the speed of tube heating and cooling process and the speed of tube get-in and get-out . The critical dimension uniformity is reduced from ±4% to ±2%。