对半导体脉冲功率开关反向开关晶体管 (RSD)的结构进行了优化，在RSD中引入缓冲层，建立器件数值模型并作仿真分析，结果表明:缓冲层结构起到了截止电场的作用，使得器件基区得以减薄，较传统结构RSD阻断电压升高而开通电压降低。针对RSD的特殊工作方式，提出了RSD开通电压、关断时间等关键参数的测试方案并进行了实验测量。进行了RSD大电流开通试验，直径7.6 cm的堆体在12 kV主电压下成功通过峰值电流173 kA，传输电荷32 C。

The structure of the semiconductor pulsed power switch reversely switched dynistor(RSD) was optimized by introducing a buffer layer. The numerical model of the device was established and the simulation analysis was carried out. The results show that the buffer layer can stop the electrical field and make the base region thinner. Compared with the conventional structure, the buffer layer structure improves the blocking voltage and reduces the turn-on voltage. According to the special operating mode of the RSD, the schemes for measuring key parameters such as the turn-on voltage and turn-off time for the RSD were proposed and realized by experiment. The high current turn-on experiments were carried out, in which the peak current of 173 kA passed through the RSD assembly of 7.6 cm diameter successfully. The main discharge voltage was 12 kV and the transferred electric charge amount was 32 C.