半导体光电, 2012, 33 (2): 204, 网络出版: 2012-05-22  

In2Ge2O7薄膜制备及其紫外光敏特性研究

Preparation and Ultraviolet Photoresponse of In2Ge2O7 Thin Films
作者单位
电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054
摘要
以In2O3和GeO2为原料, 采用碳还原法制备了In2Ge2O7多晶薄膜, 利用XRD和SEM对薄膜的结构和形貌进行了表征。对基于In2Ge2O7薄膜的金属半导体金属(MSM)紫外探测器进行了紫外光电导特性测量, 结果显示:在波长为250nm的紫外光照射下, 在5V偏压下, 器件的光电流为727μA(暗电流为12μA), 光响应度达到262.9A·W-1, 光响应上升时间约为67s, 下降时间约为15s。分析认为较长的响应时间是由于内部的缺陷与位错造成的。初步研究结果表明:In2Ge2O7薄膜可以作为一种良好的日盲紫外探测材料。
Abstract
In2Ge2O7 thin film was prepared by carbothermal reduction method using In2O3 and GeO2 as raw materials. The properties were characterized by XRD, SEM. The characteristics of the In2Ge2O7 thin film based metalsemiconductormetal(MSM) photodetectors show that the photo current was 727μA and the dark current was 12μA), and a high responsivity of 262.9A·W-1 was achieved under 5V bias when it was irradiated by the ultraviolet light(λ=250nm). The device show a slow time response with a rise time of 67s and a decay time of 15s. The authors deduced the slow time response was caused by the defect traps in the film. The preliminary results show that the In2Ge2O7 thin film is a promising candidate for the solarblind photodetectors.

冯琳, 褚夫同, 唐永旭, 李瑶, 刘兴钊. In2Ge2O7薄膜制备及其紫外光敏特性研究[J]. 半导体光电, 2012, 33(2): 204. FENG Lin, CHU Futong, TANG Yongxu, LI Yao, LIU Xinzhao. Preparation and Ultraviolet Photoresponse of In2Ge2O7 Thin Films[J]. Semiconductor Optoelectronics, 2012, 33(2): 204.

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