应用激光, 2012, 32 (2): 134, 网络出版: 2012-05-22
不同波长激光对绝缘体上硅材料损伤阈值的理论研究与数值分析
Theoretical Research and Numerical Analysis on Laser with Different Wavelengths Induced Damage Threshold of Silicon-on-Insulator Material
摘要
分析了不同波长激光辐照绝缘体上硅(SOI)材料时的相互作用机制。使用ANSYS 软件热分析模块, 通过有限元方法模拟得到波长分别是355、 532、 1 064 nm的激光辐照SOI材料后的温度场分布。讨论了不同波长激光辐照SOI材料表面时的自加热现象。
Abstract
The mechanism of interaction between laser with different wavelengthes and Silicon-on-Insulator(SOI) material is studied. The temperature distributions in the SOI material after laser pulse duration are simulated by a finite element analysis method with the ANSYS heat analysis module, and the laser wavelengths are 355 nm, 1064 nm, 532 nm respectively. The self-heating phenomenon in SOI when irradiatied by laser with different wavelengthes is discussed.
刘晨星, 张大勇, 付博, 李阳龙, 任攀. 不同波长激光对绝缘体上硅材料损伤阈值的理论研究与数值分析[J]. 应用激光, 2012, 32(2): 134. Liu Chenxing, Zhang Dayong, Fu Bo, Li Yanglong, Ren Pan. Theoretical Research and Numerical Analysis on Laser with Different Wavelengths Induced Damage Threshold of Silicon-on-Insulator Material[J]. APPLIED LASER, 2012, 32(2): 134.
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