以非制冷微测辐射热计型红外探测器应用为需求背景，采用射频磁控溅射技术在 300℃低温条件下制备了氧化钒薄膜。采用 X射线衍射(XRD)、原子力显微镜(AFM)、能量色散谱(EDS)及 X射线光电子能谱(XPS)技术表征了薄膜的结晶状态、微观结构与化学组成。采用四探针技术研究了薄膜的电学性能。结果表明该薄膜主要为非晶态的二氧化钒(VO2)，并具有光滑的表面形貌。这种非晶 VO2薄膜在 22～100℃温度范围内不存在半导体 -金属相变。 100 nm厚的非晶 VO2薄膜室温下的面电阻为 600 kΩ/□，同时表现出－2.1%/℃的较高电阻温度系数(TCR)，这表明该薄膜有希望用于非制冷微测辐射热计型红外探测器。

Aimed at uncooled microbolometer infrared detector applications, vanadium oxide thin films were fabricated successfully by the radio frequency magnetron sputtering technique at low temperature of 300℃. The crystalline, microstructure and composition of the films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), energy-dispersive spectra (EDS) and X-ray photoelectron spectroscopy (XPS). The electric properties of the film were investigated using four-point probe technique. The results show that the film is VO2 phase and exhibits amorphous structure with smooth surface morphology. Semi-conductor-to-metal phase transition was not observed for such an amorphous VO2 thin film in the temperature range of 22-100℃. Moreover, excellent performances such as temperature coefficient of resistance (TCR) of -2.1%/℃ at room temperature and sheet resistance of 600 kΩ/square was obtained in the VO2 thin film with suitable thickness (100 nm), suggesting a potential application in uncooled microbolometer infrared detectors.