为了深入研究光抽运垂直外腔面发射激光器的增益特性，以InGaAs/GaAs应变量子阱系统为例，建立了将带隙、带边不连续性计算和带结构计算系统结合起来的完整体系，考虑在应变影响下能带及波函数的混合效应。利用有限差分法对含6×6 Luttinger-Kohn哈密顿量的有效质量方程精确求解，得到了InGaAs/GaAs应变量子阱导带、价带的能带结构和包络函数，然后选用Lorentzian线形函数，数值模拟了量子阱的材料增益谱和自发辐射谱。最后讨论了阱宽、载流子浓度、温度等因素对量子阱材料增益的影响，为光抽运垂直外腔面发射激光器的优化设计提供了理论依据。

To investigate the gain characteristics of optically pumped vertical external cavity surface emitting lasers, taking InGaAs/GaAs strained quantum wells as an example, a complete system model which considers all the effects of the band-gap, band-edge discontinuities and band structure is established. In view of the valence band mixing and the wave function mixing, the 6×6 effective-mass Luttinger-Kohn Hamiltonian is solved by using the finite difference method, and the conduction-band structures, the valence-band structures and envelope functions are obtained. And then the material gain and spontaneous radiation spectrum with linear Lorentzian function are simulated numerically. Finally, the effects of the well width, carrier density, temperature and other factors on the quantum-well gain are discussed. The calculated results provide a theoretical basis for the optimized design of optically pumped vertical external cavity surface emitting lasers.