发光学报, 2012, 33 (5): 519, 网络出版: 2012-06-11
AlN插入层对aAlGaN的外延生长的影响
Effect of AlN Interlayer on aplane AlGaN Grown by MOCVD
摘要
采用有机金属化学气相沉积(MOCVD)在r面蓝宝石衬底上生长aAlGaN外延膜,研究了AlN插入层对aAlGaN外延膜的应力和光学性质的影响。根据高分辨X射线衍射(HRXRD)技术和扫描电子显微镜(SEM)我们可以得到,AlN插入层有效地提高了aAlGaN外延膜的晶体质量并减小了外延膜材料结构的各向异性。由拉曼光谱得到AlN插入层的引入减小了aAlGaN外延膜的面内压应力,其原因是AlN插入层可以当作衬底有效的调制与减小aAlGaN外延膜与r面蓝宝石衬底的晶格失配,从而使aAlGaN的面内应力得到适当释放。对室温下的光致发光进行测量得到AlN插入层的使用使近带边发射峰(NBE)发生了红移,这可能是由于残余应力的减小引起。
Abstract
The effect of AlN interlayer on strain states and its effect on optical properties of aAlGaN epilayers grown by using metal organic chemical vapor deposition (MOCVD) method are investigated. The strain is characterized by the frequency shift based on Raman spectroscopy measurement. The results show that residual strain in aAlGaN grown on the AlN interlayer is relaxed due to AlN interlayer act as a stable and compliant substrate induced weakening of mechanical strength. Accordingly, the near band edge emission (NBE) peak shows red shift in room temperature photoluminescence measurement. In addition, the introduction of AlN interlayer lead to the red shift of NBE photoluminescence peaks, which can be contribute to the strain determined by Raman spectra.
贾辉, 陈一仁, 孙晓娟, 黎大兵, 宋航, 蒋红, 缪国庆, 李志明. AlN插入层对aAlGaN的外延生长的影响[J]. 发光学报, 2012, 33(5): 519. JIA Hui, CHEN Yiren, SUN Xiaojuan, LI Dabing, SONG Hang, JIANG Hong, MIAO Guoqing, LI Zhiming. Effect of AlN Interlayer on aplane AlGaN Grown by MOCVD[J]. Chinese Journal of Luminescence, 2012, 33(5): 519.