发光学报, 2012, 33 (5): 525, 网络出版: 2012-06-11
980 nm半导体激光器腔面膜钝化新技术
The Novel Passivation Method for 980 nm Semiconductor Laser Diode Face Coating
摘要
研究了不同腔面钝化方法对980 nm渐变折射率波导结构InGaAs/AlGaAs半导体激光器输出激光功率的影响。将980 nm半导体激光器管芯前后腔面不蒸镀钝化膜与蒸镀Si钝化膜和蒸镀ZnSe钝化膜的方法进行了对比。结果表明,蒸镀ZnSe钝化膜比蒸镀Si钝化膜的半导体激光器输出光功率提高了11%,比不蒸镀钝化膜的半导体激光器输出激光功率提高了42%。不蒸镀钝化膜的半导体激光器的失效电流为4.1 A,蒸镀Si钝化膜的半导体激光器的失效电流为5.1 A, 蒸镀ZnSe钝化膜的半导体激光器的失效电流为5.6 A。对半导体激光器失效的原因进行了分析。在半导体激光器前后腔面蒸镀ZnSe钝化膜能有效地提高器件的输出光功率。
Abstract
The effect of the output power on difference passivation facet in 980 nm graded index waveguide structure InGaAs/AlGaAs laser diodes was studied. The output power of the 980 nm laser diodes with no facet passivation, Si passivation, and ZnSe passivation at the front and the back facet were compared. The test results show that output power of the ZnSe passivation method is 11% higher than Si passivation method, and is 42% higher than no facet passivation. The laser diode of no facet passivation is failure at the current is 4.1 A, the Si passivation is 5.1 A, ZnSe passivation is 5.6 A. The reasons of failure for difference passivation were analyzed. In conclusion, the method of ZnSe passivation facet can increase the output power of semiconductor lasers.
李再金, 李特, 芦鹏, 曲轶, 薄报学, 刘国军, 王立军. 980 nm半导体激光器腔面膜钝化新技术[J]. 发光学报, 2012, 33(5): 525. LI Zaijin, LI Te, LU Peng, QU Yi, BO Baoxue, LIU Guojun, WANG Lijun. The Novel Passivation Method for 980 nm Semiconductor Laser Diode Face Coating[J]. Chinese Journal of Luminescence, 2012, 33(5): 525.