液晶与显示, 2012, 27 (3): 313, 网络出版: 2012-06-11   

高性能顶栅结构有机薄膜晶体管

High Performance Organic Thin Film Transistor Based on Top-Gate Configuration
作者单位
中国科学院 上海高等研究院 新型显示技术研究中心,上海201210
摘要
采用六联苯(p-6P)和氧钒酞菁(VOPc)作为有源层材料,利用弱外延生长技术制备有机薄膜晶体管(OTFT)。在相同的工艺条件下制备了顶栅结构(top-gate)和底栅结构(bottom-gate)两种器件构型,发现两种不同结构的OTFT器件特性存在较大的差异,top-gate OTFT的迁移率比bottom-gate OTFT 高很多。在顶栅结构的器件构型中获得了较高的器件特性参数,迁移率达到1.6 cm2/V·s。研究了弱外延生长技术应用在两种不同器件构型中的差异,并解释了顶栅结构OTFT迁移率较高的原因。
Abstract
Organic thin film transistors based on Weak Epitaxy Growth (WEG) technology are fabricated with two different design: top-gate and bottom-gate configurations. The active layer materials of the OTFT are p-6P and vanadyl phthalocyanine (VOPc). The two structural OTFTs are prepared under the same process conditions, and it is found that the device performance is different. The mobility of top-gate OTFT is much higher than that of the bottom-gate OTFT. A high mobility of 1.6 cm2/V·s is obtained in the top-gate structure. The differentiation of top-gate and bottom-gate OTFTs is studied by Weak Epitaxy Growth (WEG) technology, and the reasons of higher mobility OTFT based on the top-gate configuration is explained.

洪飞, 谭莉, 朱棋锋, 向长江, 韩学斌, 张其国, 郭晓东, 申剑锋. 高性能顶栅结构有机薄膜晶体管[J]. 液晶与显示, 2012, 27(3): 313. HONG Fei, TIAN Li, ZHU Qi-feng, XIANG Chang-jiang, HAN Xue-bin, ZHANG Qi-guo, GUO Xiao-dong, SHEN Jian-feng. High Performance Organic Thin Film Transistor Based on Top-Gate Configuration[J]. Chinese Journal of Liquid Crystals and Displays, 2012, 27(3): 313.

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