利用溶胶凝胶法在Si (100) 和LNO/Si (100) 衬底上成功制备了ZnMn共掺钛酸钡薄膜.为了更充分地研究掺杂量对薄膜的晶体微结构和铁电性的影响，利用同样的方法分别制备了不同掺杂量的掺Zn和掺Mn钛酸钡薄膜.X射线衍射和原子力显微镜测量的结果表明薄膜均匀致密，且平均晶粒尺寸在30 nm以内.通过比较400~700 nm范围内各钛酸钡薄膜的折射率和消光系数，可以得到，其禁带宽度随着掺Zn或掺Mn量的变化而变化.对薄膜的铁电性能进行研究表明，ZnMn钛酸钡具有良好的铁电性，其剩余极化值为11.26 μC/cm2，说明微量的ZnMn共掺可以增强薄膜的铁电性.

ZnMn codoped BaTiO3 films were fabricated on Si (100) and LNO/Si (100) substrates by a solgel procedure. In order to study the effects of different doping levels on the microstructure and ferroelectric phase of BaTiO3 thin films, BTO films doped with Zn and Mn, respectively, were also investigated. Both the characterization of Xray diffraction (XRD) and atomic force microscope (AFM) indicate uniform and dense films with average grain size under 30 nm. By comparisons of the optical constant refractive index and extinction coefficient of BaTiO3 films in the wavelength from 400 nm to 700 nm, it was obtained that there is a change in the optical band gap due to the different amount of Zn and Mn added. Furthermore, a better defined PE loop with a remnant polarization of 11.26 μC/cm2 shows that Zn and Mn dopanting play an essential role in ferroelectric improvement.