针对高功率1060 nm半导体激光器的外延结构，分析了影响器件功率进一步提高的原因.根据分析，优化了激光器的量子阱结构和波导结构，并理论模拟了波导宽度对模式和输出功率的影响.根据不同模式的光场分布，对量子阱有源区的位置进行了优化，并设计了非对称、宽波导结构.对不同模式的限制因子进行了计算，结果表明，优化后的非对称波导结构能够在降低基模的限制因子的同时，增加高阶模式的损耗.

The imperfects in the wafer structure of high power 1060 nm diode laser, which prevents the improvement of laser power, was analyzed. Base on the analyzing results, the quantum well and the waveguide form were optimized. The relationship between waveguide width and laser power was simulated. According to the distribution of various modes, the position of quantum well was optimized and an asymmetric wide waveguide structure was designed. The calculation results of confinement factor for various modes show that the optimized asymmetric waveguide structure could increase the loss of high order modes while decrease the confinement factor of fundamental mode.