红外与毫米波学报, 2012, 31 (3): 231, 网络出版: 2012-06-14
Ga/N共掺杂对InSb电子结构的影响
The effect of Ga/N codoping on electronic structure of InSb
摘要
利用基于密度泛函理论的第一性原理赝势方法，研究了Ga和N共掺杂闪锌矿InSb半导体的电子结构和电子性质.研究发现单独掺杂Ga或N对InSb带隙的影响较小.在共掺杂Ga/N的情况下，当Ga/N浓度增加时对InSb的带隙影响明显.这些理论结果对半导体材料的能带工程提供了一定的参考价值.
Abstract
The electronic structure and properties of zinc blende InSb codoped with Ga and N have been investigated by means of the density functional theory based on firstprinciples pseudo potential calculations. It is found that single species of N or Ga doping has a small effect on the band gap of InSb. With Ga and N codoped into InSb, its band gap is changed remarkably with the increase of codoping level of Ga/N.
张会媛, 邢怀中, 张蕾. Ga/N共掺杂对InSb电子结构的影响[J]. 红外与毫米波学报, 2012, 31(3): 231. ZHANG HuiYuan, XING HuaiZhong, ZHANG Lei. The effect of Ga/N codoping on electronic structure of InSb[J]. Journal of Infrared and Millimeter Waves, 2012, 31(3): 231.
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