光学学报, 2012, 32 (8): 0816002, 网络出版: 2012-06-19
碱溶液修饰硅纳米线阵列绒面
Texturing of Silicon Nanowire Arrays by Post-Treatment in Alkali Solution
材料 硅纳米线阵列 减反射 金属催化化学腐蚀法 各向异性 materials silicon nanowires array antireflection metal catalyzed chemical etching anisotropy
摘要
提出用碱溶液修饰硅纳米线阵列制作太阳能绒面的方法。实验中首先采用金属催化化学腐蚀法在Si(100)基底上制备了定向排列的硅纳米线阵列,然后将纳米线阵列浸入碱溶液中进行修饰,修饰时间分别为10,30,50,60,90 s。通过扫描电子显微镜(SEM)对硅纳米线阵列进行形貌分析,采用太阳能测试系统附带的积分球测量纳米线阵列绒面结构的反射光谱。通过测量和分析发现硅纳线阵列在碱溶液中修饰30 s时表面分布均匀,在400~1000 nm波段的综合反射率低于4%。结果表明碱溶液修饰纳米线阵列的方法能够有效分散束状硅纳米线阵列,明显降低绒面的反射率,并且初步分析了碱溶液修饰硅纳米线阵列的分散机理。
Abstract
The fabrication of silicon nanowire arrays by post-treatmant in alkali solution is proposed. First, vertically aligned silicon nanowire (SiNW) arrays are fabricated over large areas using an electroless etching (EE) method. Then the SiNW is dipped in the mixture of NaOH and IPA for 10, 30, 50, 60, 90 s, respectively. Each SiNW is separated from the bunched SiNW. Compared to the bunched SiNWs, the dispersed SiNW arrays could drastically suppress the optical reflection(<4%) over a wide range of 400~1000 nm spectral bandwidth. In additon, the mechanism of nanowires scattered by the alkaline solution is tentatively analysed which provides the reference for the optimization of the preparation and application of silicon nanowires arrays.
蒋玉荣, 秦瑞平, 边长贤, 杨海刚, 马恒, 常方高. 碱溶液修饰硅纳米线阵列绒面[J]. 光学学报, 2012, 32(8): 0816002. Jiang Yurong, Qin Ruiping, Bian Changxian, Yang Haigang, Ma Heng, Chang Fanggao. Texturing of Silicon Nanowire Arrays by Post-Treatment in Alkali Solution[J]. Acta Optica Sinica, 2012, 32(8): 0816002.