为了研究用于表面等离子（SP）波的可集成表面等离激元受激放大辐射(SPASER)放大器，设计了植入饱和吸收体的金属绝缘体金属(MIM)结构放大器的基本组成。根据SPASER的基本原理，对激射条件进行了分析，给出了放大器的制作工艺和抽运脉冲的设计以及性能指标。结果表明研制的放大器在选择566 nm波长的入射光和532 nm波长的抽运光，放大区采用长度范围为1~1.5 μm的条件下，其脉冲响应时间可达100 fs，带宽为1.5~2 THz，SP的放大增益为30~60 dB。该SPASER放大器研究将为大规模集成光子学芯片设计提供理论和技术基础，可在下一代高速通信系统中得到广泛应用。

In order to research the integration surface plasmon amplification by stimulated emission of radiation (SPASER) amplifier for surface plasmon (SP) amplification, the basic components of amplifier which includes metal-insulator-metal (MIM) structure embeded by the saturation absorber are designed and discussed. According to the basic principle of SPASER, stimulated emission conditions are analyzed. Meanwhile, the fabrication process of amplifier and pump pulse are designed, and the performance index is given. The results show that under the conditions of the incident light wavelength of 566 nm, pump light wavelength of 532 nm and the length of amplification region of 1~1.5 μm, the pulse response time can reach 100 fs, the bandwidth of 1.5~2 THz and gain of SP-ranges from 30 to 60. SPASER amplifier research will provide theoretical and technology foundation for large-scale integrated photonic chip, which will be widely used for high-speed communications system in next generation.