对GaN基蓝光功率型LED在老化前和老化期间施加反向人体模式静电放电(ESD)，并对静电打击前后及老化前后的LED光学电学参数进行分析。实验结果及理论分析表明，ESD使LED芯片有源层及限制层中产生缺陷，最终导致电学特性及光学特性的变化。ESD给LED带来的损伤可在老化前期过程中被局部恢复，但随着老化时间推移，电参数漂移程度及光衰幅度不断增大，而老化过程中LED对ESD的敏感度增加，使LED抗ESD能力减弱。

Blue GaN-based power LEDs are biased by negative human body mode electrostatic-discharge (ESD) before and during the aging time, and the characteristics of LEDs are analyzed before and after aging experiment and ESD stress. It is found that the generation of defects in active region and cladding layers after ESD stress could finally lead to degradation of LEDs. The defects induced by ESD could be restored partly in the early aging. However, these defects can cause parameters drift more seriously. Moreover, LEDs could be more sensitive to ESD stress and have lower antistatic ability during aging.