半导体光电, 2012, 33 (3): 382, 网络出版: 2012-06-25  

CCD含氯氧化工艺仿真校准研究

Simulation and Calibration on CCD Oxidation Containing Chlorine
作者单位
重庆光电技术研究所,重庆 400060
摘要
通过对含氯氧化在线实验结果和工艺仿真结果进行对比,并进行仿真工艺校准,发现采用氯含量相同的仿真校准结果较之等物质量仿真校准结果与实际工艺实验结果相吻合。对氯含量相同氧化校准模型进行了不同温度、不同氧化方式的验证,仿真结果与在线实验结果相吻合,并利用该模型对CCD工艺制作中含氯氧化进行了仿真,仿真结果与CCD工艺制作测试数据相一致。
Abstract
By comparing the results of on-line experiments and process simulations of CCD oxidation containing chlorine, and based on making calibrations on the simulation results, it is found that the calibration model with the same content chlorine can obtain better result than the model with the same MOL. Then validations were performed on the calibration model with the same content chlorine under different temperatures and oxidation styles, and the simulation results dovetail with the experimental results. At last, simulations on CCD process were carried out with the calibration model containing the same content chlorine, and the results agree with the test data.

钟玉杰, 王小强, 许青, 程顺昌, 李睿智. CCD含氯氧化工艺仿真校准研究[J]. 半导体光电, 2012, 33(3): 382. ZHONG Yujie, WANG Xiaoqiang, XU Qing, CHENG Shunchang, LI Ruizhi. Simulation and Calibration on CCD Oxidation Containing Chlorine[J]. Semiconductor Optoelectronics, 2012, 33(3): 382.

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