采用高温熔融热处理法，以ZnSe作为PbSe量子点的硒源，成功制备了较高浓度的PbSe量子点硅酸盐玻璃。透射电子显微镜（TEM）测试表明，量子点在玻璃基质中的体积比高达2%~4%，高于采用Se作为硒源时的掺杂体积比。X射线衍射（XRD）测试表明，PbSe量子点呈立方晶体结构。光致发光（PL）光谱测试表明，量子点有强烈的荧光发射，发光波长半峰全宽(FWHM)覆盖1400~2600 nm，其PL峰值强度和FWHM均大于以Se为硒源时的情形。以ZnSe代替Se作为PbSe量子点的硒源，可有效避免Se组分的高温挥发，同时，残余Zn形成的ZnO有利于玻璃中PbSe量子点的析晶，从而提高了PbSe量子点在玻璃中的含量。该PbSe量子点玻璃，可用来进一步制备成超带宽、高增益的红外光纤放大器。

A silicate glass doped PbSe quantum dot (QD) with high concentration is prepared by using a high-temperature melting heat treatment method and taking ZnSe as a precursor of PbSe QD. The transmission electron microscopy (TEM) shows that the QD volume ratio in the glass reaches 2%~4%, which is higher than that of using simple substance Se as a precursor of PbSe. The X-ray diffraction (XRD) measurement shows that the PbSe QD constitute a cubic crystal structure. The measured photoluminescence (PL) spectra shows that the QD glass has strong photoluminescence emission, with full width at half maximum (FWHM) in the range from 1400 nm to 2600 nm. Under the same heat treatment condition, both the PL peak intensity and the FWHM are greater than that of simple substance Se. Instead of Se, ZnSe can avoid vaporization of Se component in high temperature, and be beneficial to crystallization of PbSe QDs in the glass due to the remaining Zn forming ZnO, as a result, QD concentrations in the glass is increased. The PbSe QD glass, with high doping concentration, can be used for preparing IR fiber optical amplifiers with broadband and high gain.