为了提高980 nm半导体激光器的可靠性，采用氦离子注入形成腔面电流非注入区技术制作了4 μm条宽的脊形波导激光器，并利用同一块外延片制作了常规工艺的4 μm脊形波导激光器作为对比。经过长期老化实验得知：常规工艺器件在1500 h前全部失效，而采取新技术的器件寿命超过了3000 h。通过对器件的扫描电镜分析发现，腔面灾变性损伤、铟焊料的质量和腔面污染等因素对器件失效有直接影响。

To improve the reliability of 980 nm laser diodes, we produce 4 μm ridge waveguide laser diodes with current non-injection regions near both facets by He ion implantation technology, and a conventional device is made from the same wafer for comparison. After long-term aging, all conventional devices are disabled within 1500 h, and all the devices made by He implantation work well after 3000 h. Failure analysis for devices by scanning electron microscopy (SEM), results shows that catastrophic optical damage on the facet, the quality of indium solder bonding and the stain of facets have direct impact on the devices′ reliability.