光学学报, 2012, 32 (10): 1031001, 网络出版: 2012-07-17  

硅薄膜的短波红外光学特性和1.30 μm带通滤光片

Optical Characteristics of Silicon Thin Film in Short-Wave Infrared Band and 1.30 μm Bandpass Optical Filter
作者单位
1 中国科学院上海技术物理研究所, 上海 200083
2 重庆理工大学电子信息与自动化学院, 重庆 400050
摘要
在短波红外区域(1~3 μm),硅薄膜材料因其具有折射率高、透明性好、膜层应力易匹配等诸多优点而得到广泛应用。基于改进后的Sellmeier模型拟合出了制备的硅薄膜的短波红外光学特性,以此为基础,选用硅和二氧化硅两种材料,设计并制备出中心波长在1.30 μm,相对带宽2.46%的带通滤光片。利用了硅薄膜在波长小于1.0 μm波段的吸收特性较好地扩展了带外截止范围。测量结果表明,具有2个谐振腔的带通滤光片峰值透射率达到85.8%,半功率带宽控制在约32 nm,带外截止范围覆盖了波长小于1.75 μm的光谱区域。
Abstract
Silicon material can be used as optical thin films in short-wave infrared (1~3 μm) range, because of its characteristics such as high refractive index, good transparence, easy to match with other layers. Using advanced Sellmeier model, the optical characteristics of silicon thin films have been fitted and calculated. Based on the result, silicon and silicon dioxide are selected as layer materials, and a bandpass filter is designed and fabricated. The center wavelength is about 1.30 μm; the filter with 2 cavities has 32 nm bandwidth and 85.8% transparence at the peak. Combining silicon layers′ high absorption at wavelengths smaller than 1.0 μm, the cut-off range can cover the spectrum range smaller than 1.75 μm.

段微波, 庄秋慧, 李大琪, 陈刚, 余德明, 刘定权. 硅薄膜的短波红外光学特性和1.30 μm带通滤光片[J]. 光学学报, 2012, 32(10): 1031001. Duan Weibo, Zhuang Qiuhui, Li Daqi, Chen Gang, Yu Deming, Liu Dingquan. Optical Characteristics of Silicon Thin Film in Short-Wave Infrared Band and 1.30 μm Bandpass Optical Filter[J]. Acta Optica Sinica, 2012, 32(10): 1031001.

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