中国激光, 1979, 6 (11): 40, 网络出版: 2012-08-02
砷化镓注锡的红宝石脉冲激光退火
Annealing of Sn implanted GaAs by pulsed ruby laser
摘要
Abstract
Samples of GaAs implanted with tin were irradiated with a Q-switohed ruby laser (-1J/cm2, 30-40 ns). Investigation on proton channeling and electron diffraction showed that the amorphous layer of samples implanted with 60 keV or 300 keV Sn ions was recrystallized by laser irradiation, and the dopant atoms were in substitutional sites. The maximim concentration of GaAs carriers was up to 1×1019/cm3 after annealing, it is 20 times higher than that of the heat annealed samples.
吴恒显, 刘立人, 赵新安, 忻尚衡. 砷化镓注锡的红宝石脉冲激光退火[J]. 中国激光, 1979, 6(11): 40. Wu Henxian, Liu Liren, Zhao Xinan, Xin Shanghen. Annealing of Sn implanted GaAs by pulsed ruby laser[J]. Chinese Journal of Lasers, 1979, 6(11): 40.