激光与光电子学进展, 2012, 49 (9): 091603, 网络出版: 2012-08-03
In0.68Ga0.32As热光伏电池的制作和特性分析
Fabrication and Characterization of In0.68Ga0.32As Thermophotovoltaic Cell
材料 热光伏电池 开路电压 InAsxP1-x缓冲层 外量子效率 materials thermalphotovoltaic cell open circuit voltage InAsxP1-x buffer layer external quantum efficiency
摘要
用在InP衬底上失配生长的能隙为0.6 eV的In0.68Ga0.32As制成了热光伏(TPV)电池。对其光伏特性的测试分析表明,通过对As组分渐变的InAsxP1-x缓冲层厚度的优化，可以将晶格失配引起的位错完全弛豫在缓冲层内，从而大幅改善热光伏电池的性能。在AM1.5G标准光谱下，与晶格失配没有被完全弛豫的热光伏电池相比，优化措施可将开路电压从0.19 V提高到0.21 V，外量子效率在长波处可达到85%，转换效率也提高了30%。
Abstract
Thermophotovoltaic (TPV) cells are fabricated based on lattice-mismatched In0.68Ga0.32As with bandgaps of 0.6 eV grown on InP substrates. The performace of TPV cell is significantly improved for the optimized material quality owing to the strain relaxation of the InAsxP1-x buffer layer, and therefore to suppress the dislocation. Under a standard AM1.5G spectra, the open circuit voltage of TPV cell increases from 0.19 V to 0.21 V, the long wavelength external quantum efficiency reaches 85%, and the conversion efficiency is increased by 30%.
谭明, 季莲, 赵勇明, 朱亚旗, 陈治明, 陆书龙. In0.68Ga0.32As热光伏电池的制作和特性分析[J]. 激光与光电子学进展, 2012, 49(9): 091603. Tan Ming, Ji Lian, Zhao Yongming, Zhu Yaqi, Chen Zhiming, Lu Shulong. Fabrication and Characterization of In0.68Ga0.32As Thermophotovoltaic Cell[J]. Laser & Optoelectronics Progress, 2012, 49(9): 091603.
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