采用热扩散方法, 对AlN薄膜进行了Si掺杂。利用电子能量散射谱(EDS)以及高温变温电导对薄膜进行了分析。EDS测试结果表明：在1 250 ℃的温度下, 氮化硅(SiNx)作为Si的扩散源, 可以实现对AlN薄膜的Si热扩散掺杂。高温电流-电压(I-V)测试表明：在460 ℃测试温度下, AlN薄膜在热扩散掺杂以后, 其电导从1.9×10-3 S·m-1增加到2.1×10-2 S·m-1。高温变温电导测试表明：氮空位(V3+N)和Si在AlN中的激活能为1.03 eV和0.45 eV。

This paper deals with the characteristics of aluminium nitride (AlN) films doped by silicon (Si) thermal diffusion. The films are analyzed by energy dispersive X-ray spectroscopy (EDS) and high-temperature dependent electrical conductivity. The results of EDS show that the Si element is successfully doped into the AlN films using SiNx as the diffusion source at the temperature of 1 250 ℃. The high-temperature current-voltage (I-V) measurements show that the electrical properties of the AlN films can be prominently improved by Si thermal diffusion, and at the measured temperature of 460 ℃ their electrical conductivities increase from 1.9×10-3 S·m-1 to 2.1×10-2 S·m-1 after the Si thermal diffusion. The high-temperature dependence of thermal conductivity suggests that the activation energies of V3+N and Si are about 1.03 eV and 0.45 eV, respectively.