发光学报, 2012, 33 (8): 828, 网络出版: 2012-08-15
红色Bi4Ge3O12晶体在低温下的发光性能
Luminescence of Red Bi4Ge3O12Crystal in Low Temperature
摘要
用下降法制备了Bi4Ge3O12晶体, 发现生长出来的圆柱状晶体外侧呈现淡红色。对红色Bi4Ge3O12晶体进行了低温(至8 K)下的近红外发射光谱及衰减寿命等测试分析。发现低温时(200 K以下)红色Bi4Ge3O12在1 150 nm等波长处有较强的发射峰, 强度随温度降低而增强, 衰减时间为几百μs。
Abstract
Red Bi4Ge3O12(BGO) single crystals had been grown by vertical Bridgman (VB) method. The luminescence and decay time in the near infrared (NIR) region were measured at temperature of 8 K. A broad emission band was found at around 1 150 nm at T< 200 K, and the luminescence lifetime was measured to be several hundred microseconds. The decreased temperature led to increased luminescence intensity.
俞平胜, 苏良碧, 王庆国, 徐军. 红色Bi4Ge3O12晶体在低温下的发光性能[J]. 发光学报, 2012, 33(8): 828. YU Ping-sheng, SU Liang-bi, WANG Qing-guo, XU Jun. Luminescence of Red Bi4Ge3O12Crystal in Low Temperature[J]. Chinese Journal of Luminescence, 2012, 33(8): 828.