首页 > 论文 > 红外与毫米波学报 > 31卷 > 4期(pp:294-297)

75 GHz 13.92 dBm InP DHBT 共射共基功率放大器

A 75 GHz 13.92 dBm InP DHBT cascode power amplifier

  • 摘要
  • 论文信息
  • 参考文献
  • 被引情况
  • PDF全文
分享:

摘要

报道了基于InP 基双屏质结双板晶体管(DHBT)工艺的四指共射共基75 GHz微波单片集成(MMIC)功率放大器, 器件的最高振荡频率fmax为150 GHz. 放大器的输出极发射极面积为15 μm×4 μm. 功率放大器在75 GHz时功率增益为12.3 dB, 饱和输出功率为13.92 dBm. 放大器在72.5 GHz处输入为2 dBm时达到最大输出功率14.53 dBm. 整个芯片传输连接采用共面波导结构, 芯片面积为1.06 mm×0.75 mm.

Abstract

A 75 GHz monolithic-microwave integrated-circuit (MMIC) four- fingers cascode power amplifier in InP double heterojunction bipolar transistors (DHBT) technology with an fmax about 150 GHz was reported. The amplifier has 15×4 μm2 total emitter area and exhibits a power gain of 12.3 dB at 75 GHz with 13.92 dBm output saturated power. The amplifier achieves a peak output power of 14.53 dBm with 2 dBm input power at 72.5 GHz. The MMIC adopts coplanar waveguide (CPW) structure as the transmission line structure with area of 1.06×0.75 mm2.

Newport宣传-MKS新实验室计划
补充资料

中图分类号:TN385, TN952, TN431.1

DOI:10.3724/sp.j.1010.2012.00294

基金项目:国家自然科学基金(60990312,61076060);上海市科委重点项目(10JC1404600)

收稿日期:2011-05-13

修改稿日期:2011-12-14

网络出版日期:--

作者单位    点击查看

曹玉雄:中国科学院微电子研究所, 北京 100029
苏永波:中国科学院微电子研究所, 北京 100029
吴旦昱:中国科学院微电子研究所, 北京 100029
金智:中国科学院微电子研究所, 北京 100029
王显泰:中国科学院微电子研究所, 北京 100029
刘新宇:中国科学院微电子研究所, 北京 100029

联系人作者:caoyuxiong@ime.ac.cn

备注:CAO Yu-Xiong (1984-), male, Yunnan, China, Ph.D. Candidate, Research field is microwave device modeling and circuit.

【1】Smulders P. Exploiting the 60 GHz band for local wireless multimedia access: prospects and future directions [J]. Communications Magazine, IEEE, 2002, 40(1): 140-147.

【2】Floyd B A, Reynolds S K, Pfeiffer U R, et al. SiGe bipolar transceiver circuits operating at 60 GHz [J]. Solid-State Circuits, IEEE Journal of, 2005, 40(1): 156-167.

【3】Pfeiffer U R, Reynolds S K, Floyd B A. Radio frequency integrated circuits (RFIC) symposium, 2004. Digest of Papers. 2004 IEEE, 2004:91-94.

【4】Li W, Kraemer R, Borngraeber J. Microwave symposium Digest, 2006. IEEE MTT-S International, 2006:1834-1837.

【5】FCC 03-248 Allocations and service rules for the 71~76GHz, 81~86GHz and 92~95GHz bands [S]. FCC Report and order, Nov.2003.

【6】Cao Y X, Jin Z, Ge J, et al. A symbolically defined InP double heterojunction bipolar transistor large-signal model [J]. Journal of Semiconductors, 2009, 30(12): 40001-1-40001-5.

【7】Jin Z, Su Y B, Cheng W, et al. High current multi-finger InGaAs/InP double hetero- junction bipolar transistor with the maximum oscillation frequency 253GHz [J]. CHIN.PHYS. LETT, 2008, 25(8): 3075-3078.

【8】Lonac J A, Santarelli A, Melczarsky I, et al. Gallium arsenide and other semiconductor application symposium, 2005. EGAAS 2005. European, 2005:197-200.

【9】Degachi L, Ghannouchi F M. Systematic and rigorous extraction method of HBT small-signal model parameters [J]. Microwave Theory and Techniques, IEEE Transactions on, 2006, 54(2): 682-688.

【10】O''Sullivan T. Design of millimeter-wave power amplifiers using InP heterojunction bipolar transistors [D]. University of California, San Diego, USA: Electrical Engineering, 2009.

【11】Li J C, Asbeck P M, Hussain T, et al. Compound semiconductors[C]. Post-Conference Proceedings, 2003 International Symposium on, 2003:138-143.

【12】Abbas K, Ali H. Custom integrated circuits conference[C]. Proceedings of the IEEE, 2005:571-574.

引用该论文

CAO Yu-Xiong,SU Yong-Bo,WU Dan-Yu,JIN Zhi*,WANG Xian-Tai,LIU Xin-Yu. A 75 GHz 13.92 dBm InP DHBT cascode power amplifier[J]. Journal of Infrared and Millimeter Waves, 2012, 31(4): 294-297

曹玉雄,苏永波,吴旦昱,金智,王显泰,刘新宇. 75 GHz 13.92 dBm InP DHBT 共射共基功率放大器[J]. 红外与毫米波学报, 2012, 31(4): 294-297

您的浏览器不支持PDF插件,请使用最新的(Chrome/Fire Fox等)浏览器.或者您还可以点击此处下载该论文PDF