中国激光, 1983, 10 (3): 136, 网络出版: 2012-08-31
硅中注砷的连续CO2激光退火的研究
CW CO2 laser annealing of arsenic implanted silicon
摘要
利用高功率连续CO2激光定点辐照, 对砷离子注入的硅片进行退火。实验结果表明晶格损伤得到了完全恢复, 注入砷原子的替位率与电激活率高, 还克服了激光聚焦扫描退火时引起硅片表面变形的问题。
Abstract
Stationary irradiation of high power CW CO2 laser is used for annealing of arsenic ion implanted silicon. The experimental results indicate complete recovery of crystal damage, high substitution and electrical activation of implanted arsenic atoms. The surface deformation of silicon wafer during scanning by focused laser beam has been eliminated.
林成鲁, 林梓鑫, 邹世昌, 范宝华, 吴恒显. 硅中注砷的连续CO2激光退火的研究[J]. 中国激光, 1983, 10(3): 136. Lin Chenglu, Lin Zixin, Zou Shichang, Fan Baohua, Wu Hengxian. CW CO2 laser annealing of arsenic implanted silicon[J]. Chinese Journal of Lasers, 1983, 10(3): 136.