中国激光, 1984, 11 (5): 270, 网络出版: 2012-09-04
D+2轰击隔离条形(GaAl)As/GaAs双异质结构激光器
bombardment isolated stripe geometry (GaAl) As/GaAs DH lasers
摘要
在室温至600℃退火D2+轰击过的GaAs单晶片,只要退火温度低于200℃,得到的电阻率可达(1～2)×108欧姆.厘米。用D2+轰击(GaAl)As/GaAs双异质结构片,制成的隔离条形激光器,近场、光谱、频率响应及退火等特性都与H+轰击激光器差不多。
Abstract
The resistivity achieved is up to(1-2)×108 Ω.cm for D2+ bombarded GaAs single crystal chips from the room temperature to 600℃ so long as the annealing temperature is kept below 200 ℃. The near field pattern, spectral, frequency response and degradation characteristics for the isolated stripe geometry lasers made of D2+ bombarded (QaAl) As/GaAs DH chips are almost the same as those of H+ bombarded lasers.
庄婉如, 马英棣, 胡一贯. D+2轰击隔离条形(GaAl)As/GaAs双异质结构激光器[J]. 中国激光, 1984, 11(5): 270. Zhuang Wanru, Ma Yingdi, Hu Yiguan. bombardment isolated stripe geometry (GaAl) As/GaAs DH lasers[J]. Chinese Journal of Lasers, 1984, 11(5): 270.
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