半导体光电, 2012, 33 (4): 478, 网络出版: 2012-09-04
温度波动对PV型InSb探测器响应特性的影响
Influence of Temperature Fluctuations on Response Characteristic of PVInSb Detector
摘要
对激光照射下光伏型锑化铟光电探测器的响应特性进行了研究, 得到了强激光辐照下温度波动(低温和常温温度波动)对探测器响应特性的影响。利用材料内部的光生电动势分析模型, 通过数值模拟, 给出了理论上的激光辐照下主要参数对探测器输出电压的影响。结果表明: 输出电压随着温度的上升而降低, 饱和电压也随着温度的上升而降低。特别是低温与常温下的响应特性有所不同, 随着入射光功率的增大, 低温下随温度变化的输出电压变化量减小, 常温下随温度变化的输出电压变化量增大。
Abstract
The response of PVInSb detector under laser irradiation is studied in detail, and the influence of temperature fluctuations on the response characteristic of detector under high power laser irradiation is obtained. By using the mathematic model of photoelectromotive force, a theoretical influence of several main parameters on output voltage under laser irradiation is given. The results show that output voltage and saturated voltage decrease with the increase of temperature. There are some differences in the output voltage under low temperature and normal temperature. The variations of output voltage caused by the changes of temperature decrease with the increase of incident light power under low temperature but increase with the increase of incident light power under normal temperature.
孙静, 杜立峰, 张蓉竹. 温度波动对PV型InSb探测器响应特性的影响[J]. 半导体光电, 2012, 33(4): 478. SUN Jing, DU Lifeng, ZHANG Rongzhu. Influence of Temperature Fluctuations on Response Characteristic of PVInSb Detector[J]. Semiconductor Optoelectronics, 2012, 33(4): 478.