Chinese Optics Letters, 2012, 10 (11): 110401, Published Online: Sep. 14, 2012
Research on surface photovoltage spectroscopy for GaAs photocathodes with AlxGa1?xAs buf fer layer
Abstract
Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1 xAs buffer layer are determined in order to effectively measure the body parameters for transmission-mode (t-mode) photocathode materials before Cs-O activation. Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1 xAs/GaAs structure material. This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures. It also helps study various doping structures and optimize structure designs in the future.
Shuqin Zhang, Liang Chen, Songlin Zhuang. Research on surface photovoltage spectroscopy for GaAs photocathodes with AlxGa1?xAs buf fer layer[J]. Chinese Optics Letters, 2012, 10(11): 110401.