Frontiers of Optoelectronics, 2010, 3 (3): 245, 网络出版: 2012-09-20  

High-speed, all-optical XOR gates using semiconductor optical amplifiers in ultrafast nonlinear interferometers

High-speed, all-optical XOR gates using semiconductor optical amplifiers in ultrafast nonlinear interferometers
作者单位
1 The State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Jiao Tong University, Shanghai 200240, China
2 Photonic Systems Group, Tyndall National Institute, University College Cork, Cork, Ireland
摘要
Abstract
We will review three recently-proposed highspeed, all-optical Exclusive OR (XOR) gates operating at 40 and 85 Gb/s, which were demonstrated using ultrafast nonlinear interferometers (UNIs) incorporating semiconductor optical amplifiers (SOAs). The first 40-Gb/s XOR gate was obtained using a dual UNI configuration. The second is a 40-Gb/s XOR gate without additional probe beam required, where the only inputs launched into the setup were data A and B. The XOR logic of data A and B is the sum of two components AB and AB, each of which was obtained from the output of UNI via cross-phase modulation (XPM) in SOAs. Furthermore, an 85-Gb/s XOR gate is, by far, the fastest XOR gate realized by SOAs, which was also demonstrated using a dual UNI structure. The operating speed of the XOR gate was enhanced by incorporating the recently proposed turboswitch configuration. In addition, the SOA switching pulse energies of these XOR gates were lower than 100 fJ.

Xuelin YANG, Qiwei WENG, Weisheng HU. High-speed, all-optical XOR gates using semiconductor optical amplifiers in ultrafast nonlinear interferometers[J]. Frontiers of Optoelectronics, 2010, 3(3): 245. Xuelin YANG, Qiwei WENG, Weisheng HU. High-speed, all-optical XOR gates using semiconductor optical amplifiers in ultrafast nonlinear interferometers[J]. Frontiers of Optoelectronics, 2010, 3(3): 245.

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