Frontiers of Optoelectronics, 2010, 3 (3): 328, 网络出版: 2012-09-20  

Aged rare earth doped silicates as optoelectronic material

Aged rare earth doped silicates as optoelectronic material
作者单位
1 Department of Physics, Government College, Ajmer 334001, India
2 Emeritus Scientist, Department of Physics, Indian Institute of Technology, Kharagpur 721302, India
3 Principal, BMIT, Jaipur 302022, India
4 Chino Scientific Instruments Manufacturing, Ajmer 305004, India
摘要
Abstract
Samples of various concentrations were prepared and kept unsintered for a period of three years to study the consistency of composition prepared and structural evolution of glass. The expanded peaks in the Raman spectra arise due to thermal agitation, and a Boltzmann type of distribution was expected in the silicate gels. The behavior of the gels during the dehydroxylation and dehydration is conditioned by its microstructure, which depends upon the physical conditions, i.e., pH, and drying conditions.

Vandana RANGA, H. N. ACHARYA, R. K. KHANNA, Anirudh KUMAR. Aged rare earth doped silicates as optoelectronic material[J]. Frontiers of Optoelectronics, 2010, 3(3): 328. Vandana RANGA, H. N. ACHARYA, R. K. KHANNA, Anirudh KUMAR. Aged rare earth doped silicates as optoelectronic material[J]. Frontiers of Optoelectronics, 2010, 3(3): 328.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!