Frontiers of Optoelectronics, 2010, 3 (3): 328, 网络出版: 2012-09-20
Aged rare earth doped silicates as optoelectronic material
Aged rare earth doped silicates as optoelectronic material
摘要
Abstract
Samples of various concentrations were prepared and kept unsintered for a period of three years to study the consistency of composition prepared and structural evolution of glass. The expanded peaks in the Raman spectra arise due to thermal agitation, and a Boltzmann type of distribution was expected in the silicate gels. The behavior of the gels during the dehydroxylation and dehydration is conditioned by its microstructure, which depends upon the physical conditions, i.e., pH, and drying conditions.
Vandana RANGA, H. N. ACHARYA, R. K. KHANNA, Anirudh KUMAR. Aged rare earth doped silicates as optoelectronic material[J]. Frontiers of Optoelectronics, 2010, 3(3): 328. Vandana RANGA, H. N. ACHARYA, R. K. KHANNA, Anirudh KUMAR. Aged rare earth doped silicates as optoelectronic material[J]. Frontiers of Optoelectronics, 2010, 3(3): 328.