Frontiers of Optoelectronics, 2011, 4 (2): 137, 网络出版: 2012-09-21
Growth of large size AgGaGeS4 crystal for infrared conversion
Growth of large size AgGaGeS4 crystal for infrared conversion
摘要
Abstract
Single crystals of AgGaGeS4 (AGGS) were grown in a modified Bridgman furnace with 25 mm in diameter and 70mm in length. The transmission spectra of as-grown AGGS slices were measured on a Hitachi 270 - 30 spectrophotometer, the fabricated device crystal was 5 mm×5mm×3.5 mm in dimension and its absorption was 0.04-0.15 cm-1. Frequency doubling of 2.79 and 8 μm laser radiation were investigated using fabricated device crystals with thicknesses of 3.5 and 2.7 mm respectively.
Haixin WU, Youbao NI, Chen LIN, Mingsheng MAO, Ganchao CHENG, Zhenyou WANG. Growth of large size AgGaGeS4 crystal for infrared conversion[J]. Frontiers of Optoelectronics, 2011, 4(2): 137. Haixin WU, Youbao NI, Chen LIN, Mingsheng MAO, Ganchao CHENG, Zhenyou WANG. Growth of large size AgGaGeS4 crystal for infrared conversion[J]. Frontiers of Optoelectronics, 2011, 4(2): 137.
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