Frontiers of Optoelectronics, 2009, 2 (4): 446, 网络出版: 2012-10-08
Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode
Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode
multi-quantum well (MQW) luminescence dual-wavelength metal-organic chemical vapor deposition (MOCVD)
摘要
Abstract
Blue and green dual wavelength InGaN/GaN multi-quantum well (MQW) light-emitting diode (LED) has wide applications in full color display, monolithic white LED and solid state lighting, etc. Blue and green dual wavelength LEDs, which consist of InGaN strainreduction layer, green InGaN/GaN MQWand blue InGaN/GaN MQW, were grown by metal-organic chemical vapor deposition (MOCVD), and the luminescence properties of dual wavelength LEDs with different well arrangements were studied by photoluminescence and electroluminescence. The experimental results indicated that well position played an important role on the luminescence evolvement from photoluminescence to electroluminescence.
Feng WEN, Lirong HUANG, Liangzhu TONG, Dexiu HUANG, Deming LIU. Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode[J]. Frontiers of Optoelectronics, 2009, 2(4): 446. Feng WEN, Lirong HUANG, Liangzhu TONG, Dexiu HUANG, Deming LIU. Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode[J]. Frontiers of Optoelectronics, 2009, 2(4): 446.
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