Frontiers of Optoelectronics, 2012, 5 (3): 292, 网络出版: 2012-10-12  

Research on VOx uncooled infrared bolometer based on porous silicon

Research on VOx uncooled infrared bolometer based on porous silicon
作者单位
1 School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
2 Wuhan National Laboratory for Optoelectronics, Wuhan 430074, China
摘要
Abstract
In this paper, vanadium oxide thin film of TCR of - 3.5%/K has been deposited by pulsed DC magnetron sputtering method. The property of this VOx has been investigated by X-ray diffractometer (XRD) and atomic force microscopy (AFM) in detail. XRD test indicates that this film is composed of V2O3, V3O5 and VO2.VOx microbolometer with infrared (IR) absorbing structure is fabricated based on porous silicon sacrificial layer technology. Optimized micro-bridge structure is designed and carried out to decrease thermal conductance and this structure shows good compatibility with micromachining technology. This kind of bolometer with 74% IR absorption of 8-14 μm, has maximum detectivity of 1.09×109 cm$Hz1/2/W at 24 Hz frequency and 9.8 μA bias current.

Bin WANG, Jianjun LAI, Erjing ZHAO, Haoming HU, Sihai CHEN. Research on VOx uncooled infrared bolometer based on porous silicon[J]. Frontiers of Optoelectronics, 2012, 5(3): 292. Bin WANG, Jianjun LAI, Erjing ZHAO, Haoming HU, Sihai CHEN. Research on VOx uncooled infrared bolometer based on porous silicon[J]. Frontiers of Optoelectronics, 2012, 5(3): 292.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!