发光学报, 2012, 33 (10): 1127, 网络出版: 2012-10-12  

AgOx界面插入层对GZO电极LED器件性能的影响

Effect of AgOx Interface Insertion Layer on The Performance of LEDs with Ga-doped ZnO Electrode
作者单位
1 上海大学 机电工程与自动化学院, 上海 200072
2 上海大学 新型显示技术及应用集成教育部重点实验室, 上海 200072
摘要
采用磁控溅射的方法在p-GaN上制备了GZO透明导电薄膜, 通过在p-GaN和GZO界面之间插入AgOx薄层来改善LED器件的接触性能。研究结果表明: 氮气退火后, 采用界面插入层的AgOx/GZO薄膜电阻率为5.8×10-4 Ω·cm, 在可见光的透过率超过80%。AgOx界面插入层有效地降低了GZO与p-GaN之间的接触势垒, 表现出良好的欧姆接触特性, 同时使LED器件的光电性能获得了显著的提高。在50 mA的注入电流下, 相比于常规的GZO电极LED器件, AgOx/GZO电极LED器件的正向电压由9.68 V降至6.92 V, 而发光强度提高了13.5%。
Abstract
GZO transparent conductive layers were deposited on p-GaN surface by magnetron sputtering. AgOx thin films were inserted between p-GaN and GZO to improve the performance of LED devices. The AgOx/GZO thin film exhibited low resistivity (5.8×10-4 Ω·cm) and high transmittance (above 80% in visible range) after nitrogen annealing. The AgOx interface insertion layer could effectively reduce the contact barrier, leading to good Ohmic contact characteristics of GZO/p-GaN and improved photoelectric performance of LEDs. With 50 mA injection current, the forward voltage reduced from 9.68 V to 6.92 V and the luminous intensity increased by 13.5% compared with conventional GZO electrode LEDs.

顾文, 石继锋, 李喜峰, 张建华. AgOx界面插入层对GZO电极LED器件性能的影响[J]. 发光学报, 2012, 33(10): 1127. GU Wen, SHI Ji-feng, LI Xi-feng, ZHANG Jian-hua. Effect of AgOx Interface Insertion Layer on The Performance of LEDs with Ga-doped ZnO Electrode[J]. Chinese Journal of Luminescence, 2012, 33(10): 1127.

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