为提高硅基支持系统制备中光刻过程的线宽精度, 用正交试验分析了前烘、曝光、显影主要步骤中一些主要参数对制备结果的影响, 得到了它们的影响程度的规律以及较优的参数组合。在此基础上设计和训练了合适的前向误差反向传播神经网络, 对主要工艺参数进行了进一步的分析、预测和优选, 并用实验加以验证。最终得到在胶厚约1.55 μm时, 前烘温度100 ℃, 时间90 s；曝光时间5 s；显影温度15 ℃, 时间90 s时, 光刻后图形的线宽偏差最小, 达到了0.3 μm以下。

To improve the photolithography precision of Si support system, some main process parameters in soft bake, exposure, development were analyzed with orthogonal experiment.The influence degree of the parameters, including soft bake time, exposure time, development time and temperature, and their best combination were found. On this basis, a proper back propagation (BP) neural network was designed and trained and the experimental data were analyzed and optimized by the BP neural network. Verification experiments supported the correctness of the BP neural network. When the photoresist is 1.55 μm thick, the optimum process parameters are: soft bake temperature 100 ℃, time 90 s; exposure time 5 s; development temperature 15 ℃, time 90 s. On this condition, the linewidth error can be less than 0.3 μm.