为了给基片无损检测工程提供强有力的理论基础, 提出三种形态的缺陷粒子散射模型。针对基片与缺陷粒子的半空间问题, 吸收边界使用了广义完全匹配吸收层, 结合三波技术引入激励源给出相应的连接边界条件并将互易性定理应用到近远场外推中使过程简化。数值计算给出了镶嵌于基片中的多种几何体Cu和SiO2缺陷粒子的散射场的角分布及p偏振和s偏振下镶嵌Cu球体粒子的电场分布。结果显示：角分布和场分布跟粒子形态关系密切。椭球体散射场的震荡明显比柱体场震荡激烈。在s偏振下电场强度分布差值极小, 不利于通过分析场值分布特点反演缺陷特征值。因此建议工程上使用p偏振光对基片进行无损检测。

Three kinds of defect-particle-scattering models are put forward for nondestructive examination project. The generalized perfectly matched layer can work very well in the terminate loss media. Against the half-space problem about wafers and defect particles, the connect boundary condition is given by the three-wave method. The reciprocity theorem is applied to near-far field extrapolation. The angular distribution of many kinds of Cu and SiO2 defect particles and field distribution of the inlaid Cu sphere particles by p polarization and s polarization are given. Results show that the angular distribution and field distribution are related to the shape of particles. The shake of scattering field about ellipsoid particles is more drastic than column particles. The differential field intensity is very minor with s polarization, which makes against to inverse the characteristic of defect particles. Therefore, p polarization light is suggested to use in nondestructive examination in the project.