强激光与粒子束, 2012, 24 (11): 27572762, 网络出版: 2012-10-12
CMOS电路总剂量效应最劣偏置甄别
Identification of worst-case bias condition for total ionizing dose effect of CMOS circuits
CMOS电路 总剂量效应 最劣偏置 敏感因子 CMOS circuit total ionizing dose effect worst-case bias condition factor of sensitivity
摘要
采用电路分析和解析建模方法研究了CMOS电路中甄别总剂量效应最劣辐照与测试偏置的问题。通过引入小规模模拟电路和数字电路的例子进行具体分析, 获取了不同电路的最劣偏置情况。对于数字电路, 引入了敏感因子的概念用于定量计算不同辐照与测试偏置组合下电路的总剂量效应敏感程度。利用实测数据或电路仿真结果对甄别结果进行了一一验证, 得到相一致的结论, 证明了该研究思路的正确性。
Abstract
Using circuit analysis and theoretical modeling, the problem of identifying worst-case irradiation and test bias for total ionizing dose (TID) effect of CMOS circuits is studied. Small scale analog and digital circuits are introduced and analyzed, thus worst-case bias conditions are identified step by step. To digital circuits, the concept of the sensitive factor is introduced to calculate the sensitive level of circuits to TID effect under different combinations of bias during irradiation and during test. The results are validated and verified by experimental tests or circuit simulation, which proves the rationality of the identification method.
丁李利, 郭红霞, 王忠明, 陈伟, 范如玉. CMOS电路总剂量效应最劣偏置甄别[J]. 强激光与粒子束, 2012, 24(11): 27572762. Ding Lili, Guo Hongxia, Wang Zhongming, Chen Wei, Fan Ruyu. Identification of worst-case bias condition for total ionizing dose effect of CMOS circuits[J]. High Power Laser and Particle Beams, 2012, 24(11): 27572762.
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