采用等离子体增强化学气相沉积法(PECVD)制得氮化硅和氢化非晶硅薄膜，对PECVD设备中基板支撑梢区域的膜质进行了研究。结果显示基板支撑梢对氮化硅薄膜的影响是: 基板支撑梢区域的膜厚(沉积速率)高于非基板支撑梢区域，氢含量及［SiH/NH］值高于非基板支撑梢；对氢化非晶硅薄膜的影响是: 基板支撑梢区域的膜厚(沉积速率)小于非基板支撑梢区域，氢含量高于非基板支撑梢。并对成膜影响的机理进行了分析讨论。

Silicon nitride thin films(SiNx) and hydrogenated amorphous silicon(a-Si∶H)thin films were deposited by plasma enhanced chemical vapor deposition(PECVD)method. The effect of the PECVD pin on thin films was studied．The results show that SiNx thin films: thickness(dep. rate) about pin area is larger than that in no-pin areas; hydrogen content and ［SiH/NH］ about pin area is higher than that in no pin areas. However, a-Si∶H thin films: thickness(dep. rate) about pin area is thinner than that in no pin areas; hydrogen content about pin area is higher than in no pin areas. The growth mechanism of thin films was discussed.