光学 精密工程, 2012, 20 (10): 2147, 网络出版: 2012-11-01
高功率InGaAs/GaAsP应变量子阱垂直腔面发射激光器列阵
High-power InGaAs/GaAsP strained quantum well vertical-cavity surface-emitting laser array
垂直腔面发射激光器列阵 峰值功率 功率密度 InGaAs/GaAsP应变量子阱 Vertical Cavity Surface Emitting Laser (VCSEL) arr peak power power density InGaAs/GaAsP strained quantum well
摘要
为提高垂直腔面发射激光器(VCSEL)的输出功率, 对具有3个In0.2Ga0.8As/GaAs0.92P0.08应变量子阱结构, 发射波长为977 nm的VCSEL列阵进行了研究。对量子阱结构进行了优化, 选择具有更宽带隙的GaAsP作为势垒材料, 计算了In0.2Ga0.8As/GaAs0.92P0.08量子阱的带阶。对采用In0.2Ga0.8As/GaAs0.92P0.08和In0.2Ga0.8As/GaAs两种量子阱结构的器件的输出功率进行了理论模拟和比较分析。分别测试了上述两个列阵器件的脉冲峰值功率并利用由开启电压、阈值电流和串联电阻决定的p参数评估了列阵器件的输出性能。实验结果表明, 当注入电流为110 A时, 发光面积为0.005 cm2的In0.2Ga0.8As/GaAs0.92P0.08 4×4 VCSEL 列阵获得了123 W的脉冲峰值功率, 比具有相同发光面积的In0.2Ga0.8As/GaAs列阵器件的脉冲峰值功率大13 %, 前者相应的功率密度和斜率效率分别为45.42 kW/cm2和1.11 W/A。连续和脉冲工作下的p值分别为15和13, 表明器件在两种工作条件下都具有相对较好的输出性能。得到的结果证明, 包含3个In0.2Ga0.8As/GaAs0.92P0.08应变量子阱的4×4VCSEL列阵器件能够获得较高的功率输出。
Abstract
To improve the output powers of Vertical Cavity Surface Emitting Lasers (VCSELs), a 977 nm VCSEL array with three In0.2Ga0.8As/GaAs0.92P0.08 strained Quantum Wells(QWs) was studied. The structures of the QWs were optimized and GaAsP with a larger band gap was chosen as the barrier material, and the band offsets of In0.2Ga0.8As/GaAs0.92P0.08 were calculated. The output powers of the devices which used In0.2Ga0.8As/GaAs0.92P0.08 and In0.2Ga0.8As/GaAs QWs were simulated theoretically and analyzed comparetively, respectively and the pulsed peak powers of two array devices were measured. Then, the performance of the array device was estimated by a functional method using a p-parameter determined by the turn-on voltage, threshold current, and the differential resistance. Experimental results show that the 4×4 VCSEL array with In0.2Ga0.8As/GaAs0.92P0.08 QWs and an emitting area of 0.005 cm2 can achieve a pulsed peak power of 123 W when the injecting current is 110 A, and its power density and slope efficiency are 45.42 kW/cm2 and 1.11 W/A, respectively. This output power is 13 % larger than that of the array with In0.2Ga0.8As/GaAs QWs and the same emitting area. Furthermore, the values of p parameter are 15 and 13 under CW operation and pulsed operation, respectively, which indicates that the device has relatively good performance. In conclusion, the 4×4 VCSEL array with three In0.2Ga0.8As/GaAs0.92P0.08 strained QWs is able to achieve higher output powers.
刘迪, 宁永强, 张金龙, 张星, 王立军. 高功率InGaAs/GaAsP应变量子阱垂直腔面发射激光器列阵[J]. 光学 精密工程, 2012, 20(10): 2147. LIU Di, NING Yong-qiang, ZHANG Jin-long, ZHANG Xing, WANG Li-jun. High-power InGaAs/GaAsP strained quantum well vertical-cavity surface-emitting laser array[J]. Optics and Precision Engineering, 2012, 20(10): 2147.
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